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M
Features
* * * * * * * * * * *
TC2014/2015/2185
General Description
The TC2014, TC2015 and TC2185 are high-accuracy (typically 0.4%) CMOS upgrades for bipolar low dropout regulators, such as the LP2980. Total supply current is typically 55 A; 20 to 60 times lower than in bipolar regulators. The key features of the device include low noise operation (plus bypass reference), low dropout voltage - typically 45 mV for the TC2014, 90 mV for the TC2015, and 140 mV for the TC2185, at full load - and fast response to step changes in load. Supply current is reduced to 0.5 A (max) and VOUT falls to zero when the shutdown input is low. The devices also incorporate over-current protection. The TC2014, TC2015 and TC2185 are stable with an output capacitor of 1 F and have a maximum output current of 50 mA, 100 mA and 150 mA, respectively. For higher output versions, see the TC1107 (DS21356), TC1108 (DS21357) and TC1173 (DS21362) (IOUT = 300 mA) datasheets.
50 mA, 100 mA, 150 mA CMOS LDOs with Shutdown and Reference Bypass
Low Supply Current: 80 A (Max) Low Dropout Voltage: 140 mV (Typ) @ 150 mA High Output Voltage Accuracy: 0.4% (Typ) Standard or Custom Output Voltages Power-Saving Shutdown Mode Reference Bypass Input for Ultra Low-Noise Operation Fast Shutdown Response Time: 60 sec (Typ) Over-Current Protection Space-Saving 5-Pin SOT-23A Package Pin Compatible Upgrades for Bipolar Regulators Wide Operating Temperature Range: -40C to +125C
Applications
* * * * * * * Battery Operated Systems Portable Computers Medical Instruments Instrumentation Cellular / GSM / PHS Phones Linear Post-Regulator for SMPS Pagers
Related Literature
* Application Notes: AN765, AN766, AN776 and AN792
Typical Application
VIN + 1 1 F VIN VOUT 5 + 1 F VOUT
Package Type
5-Pin SOT-23A
VOUT 5 Bypass 4 TC2014 TC2015 TC2185 1 VIN 2 3 3 SHDN Bypass 4 0.01 F Reference Bypass Cap (Optional) Shutdown Control (from Power Control Logic) 2 GND
TC2014 TC2015 TC2185
GND SHDN
2003 Microchip Technology Inc.
DS21662C-page 1
TC2014/2015/2185
1.0 ELECTRICAL CHARACTERISTICS PIN FUNCTION TABLE
Name VIN GND SHDN Bypass VOUT Function Unregulated Supply Input Ground Terminal Shutdown Control Input Reference Bypass Input Regulated Voltage Output
Absolute Maximum Ratings
Input Voltage ................................................................... 6.5V Output Voltage ....................................... (- 0.3) to (VIN + 0.3) Operating Temperature ......................... - 40C < TJ < 125C Storage Temperature ................................. - 65C to +150C Maximum Voltage on Any Pin ................ VIN +0.3V to - 0.3V Maximum Junction Temperature ...................... ............ 150C Notice: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, VIN = VR + 1V, IL = 100 A, COUT = 3.3 F, SHDN > VIH, TA = +25C. BOLDFACE type specifications apply for junction temperature of -40C to +125C. Parameters Input Operating Voltage Maximum Output Current Sym VIN IOUTMAX Min 2.7 50 100 150 Output Voltage VOUT Temperature Coefficient Line Regulation Load Regulation (Note 4) Dropout Voltage VOUT TCVOUT VOUT/VIN VOUT /VOUT V IN - VOUT VR - 2.0% -- -- -- -1.0 -2.0 -- -- -- -- Supply Current Shutdown Supply Current IIN IINSD -- -- Typ -- -- -- -- VR 0.4% 20 40 0.05 0.33 0.43 2 45 90 140 55 0.05 Max 6.0 -- -- -- VR + 2.0% -- -- 0.5 +1.0 +2.0 -- 70 140 210 80 0.5 A A TC2185 SHDN = VIH , IL=0 SHDN = 0V mV % % (VR + 1V) < VIN < 6V TC2014;TC2015: IL = 0.1 mA to IOUTMAX TC2185: IL = 0.1 mA to IOUTMAX Note 4 Note 5 IL = 100 A IL = 50 mA TC2015; TC2185 IL = 100 mA IL = 150 mA V ppm/C Units V mA Note 1 TC2014 TC2015 TC2185 Note 2 Note 3 Conditions
Note 1: The minimum VIN has to meet two conditions: VIN = 2.7V and VIN = VR + VDROPOUT. 2: VR is the regulator output voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V. 3: -6 ( V OUTMAX - V OUTMIN ) x 10 TCVOUT = --------------------------------------------------------------------------V OUT x T 4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. 5: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value at a V differential. 6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to IMAX at VIN = 6V for T = 10 msec. 7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, JA). 8: Time required for VOUT to reach 95% of VR (output voltage setting), after VSHDN is switched from 0 to VIN .
DS21662C-page 2
2003 Microchip Technology Inc.
TC2014/2015/2185
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, V IN = VR + 1V, IL = 100 A, COUT = 3.3 F, SHDN > VIH, TA = +25C. BOLDFACE type specifications apply for junction temperature of -40C to +125C. Parameters Power Supply Rejection Ratio Output Short Circuit Current Thermal Regulation Output Noise Response Time, (Note 8) (from Shutdown Mode) SHDN Input SHDN Input High Threshold SHDN Input Low Threshold VIH VIL 60 -- -- -- -- 15 %V IN %V IN VIN = 2.5V to 6.0V VIN = 2.5V to 6.0V Sym PSRR IOUTSC VOUT/PD eN TR Min -- -- -- -- -- Typ 55 160 0.04 200 60 Max -- 300 -- -- -- Units dB mA V/W nV/Hz sec Conditions F 1 kHz, Cbypass=0.01 F VOUT = 0V Note 6, Note 7 IL = IOUTMAX, F = 10 kHz 470 pF from Bypass to GND VIN = 4V, IL = 30 mA, CIN = 1 F, COUT = 10 F
Note 1: The minimum VIN has to meet two conditions: VIN = 2.7V and VIN = VR + VDROPOUT. 2: VR is the regulator output voltage setting. For example: VR = 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V. 3: -6 ( V OUTMAX - V OUTMIN ) x 10 TCVOUT = --------------------------------------------------------------------------V OUT x T 4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. 5: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value at a V differential. 6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to IMAX at VIN = 6V for T = 10 msec. 7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, JA). 8: Time required for VOUT to reach 95% of VR (output voltage setting), after VSHDN is switched from 0 to VIN .
2003 Microchip Technology Inc.
DS21662C-page 3
TC2014/2015/2185
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 A, COUT = 3.3 F, SHDN > VIH, TA = +25C.
63.0 60.0 IDD (A) 57.0 54.0 51.0 48.0 45.0 -40 -25 -10 110 125 20 35 50 65 80 95 5
V IN = 2.8V V IN = 6.0V
Output Voltage (V)
VR = 1.8V COUT = 3.3 F
1.820 1.815 1.810 1.805 1.800 1.795 1.790 1.785 -40 -25 -10
VR = 1.8V COUT = 3.3 F IL = 150 mA
VIN = 2.8V VIN = 6.0V
110 5.6
Junction Temperature (C)
Junction Temperature (C)
FIGURE 2-1: Temperature.
0.8 Load Regulation (%) 0.6 0.4 0.2 0 -0.2 -0.4 -0.6 -0.8 2.8 3.2 3.6
V R = 1.8V COUT = 3.3 F IL = 150 mA
Supply Current vs. Junction
FIGURE 2-4: Output Voltage vs. Junction Temperature (150 mA).
1.82
TA = -45C TA = +25C
Output Voltage (V)
1.815 1.81 1.805 1.8 1.795 1.79 1.785
VR = 1.8V COUT = 3.3 F IL = 150 mA
TA = +25C TA = -45C TA = +125C
TA = +125C
4
4.4
4.8
5.2
5.6
6
2.8
3.2
3.6
4
4.4
4.8
5.2
Supply Voltage (V)
Supply Voltage (V)
FIGURE 2-2: Voltage.
1.810 Output Voltage (V) 1.805 1.800 1.795 1.790 -40 -25 -10
Load Regulation vs. Supply
FIGURE 2-5: Voltage.
0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00
Output Voltage vs. Supply
Dropout Voltage (V)
VR = 1.8V COUT = 3.3 F IL = 0.1 mA
V IN = 2.8V VIN = 6.0V
VR = 1.8V COUT = 3.3 F
IL = 150 mA IL = 100 mA
IL = 50 mA IL = 20 mA
Note: Dropout Voltage is not a tested parameter for 1.8V. VIN(min) 2.7V
-40
-25
-10
5
20
35
50
65
80
95
110
110
Junction Temperature (C)
125
Junction Temperature (C)
FIGURE 2-3: Output Voltage vs. Junction Temperature (0.1 mA).
FIGURE 2-6: Dropout Voltage vs. Junction Temperature.
DS21662C-page 4
2003 Microchip Technology Inc.
125
20
35
50
65
80
95
5
125 6
20
35
50
65
80
95
5
TC2014/2015/2185
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 A, COUT = 3.3 F, SHDN > VIH, TA = +25C.
60.0 58.0 56.0 IDD(A) 54.0 52.0 50.0 48.0 46.0 44.0 110 125 20 35 50 65 80 95 5 -40 -25 -10 Temperature (C) 2.705 2.700
VIN = 6.0V VIN = 2.8V VIN = 3.7V
Output Voltage (V)
VR = 2.7V COUT = 3.3 F
2.695 2.690 2.685 2.680 2.675 2.670 2.665 110 5.8 110 Junction Temperature (C) 125 125 20 35 50 65 80 80 -40 -25 -10 95 95 5
VR = 2.7V COUT = 3.3 F IL = 150 mA VIN = 6.0V
FIGURE 2-7: Temperature.
0.5 Load Regulation (%)
Supply Current vs. Junction
FIGURE 2-10: Output Voltage vs. Junction Temperature (150 mA).
2.705 Output Voltage (V)
0.3 0.1 -0.1 -0.3 -0.5 3.7 4 4.3 4.6 4.9 5.2
V R = 2.7V COUT = 3.3 F IL = 150 mA
TA = -45C TA = +25C
2.7 2.695 2.69 2.685 2.68 2.675 2.67 2.665
VR = 2.7V COUT = 3.3 F IL = 150 mA
TA = +25C
TA = -45C
TA = +125C
TA = +125C
5.5
5.8
3.7
4
4.3
4.6
4.9
5.2
5.5
Supply Voltage (V)
Supply Voltage (V)
FIGURE 2-8: Voltage.
2.690 2.688 2.686 2.684 2.682 2.680 2.678 2.676 2.674 2.672 2.670
Load Regulation vs. Supply
FIGURE 2-11: Voltage.
0.160 Dropout Voltage (V)
Output Voltage vs. Supply
VIN = 6.0V VIN = 3.7V
Output Voltage (V)
VR = 2.7V COUT = 3.3 F
IL = 150 mA
0.120
IL = 100 mA
0.080
IL = 50 mA
VR = 2.7V COUT = 3.3 F IL = 0.1 mA
0.040 0.000
IL = 20 mA
110
125
20
35
50
65
80
95
20
35
50
-40
-25
-10
-40
-25
Junction Temperature (C)
-10
Junction Temperature (C)
FIGURE 2-9: Output Voltage vs. Junction Temperature (0.1 mA).
FIGURE 2-12: Dropout Voltage vs. Junction Temperature.
2003 Microchip Technology Inc.
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5
5
DS21662C-page 5
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Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 A, COUT = 3.3 F, SHDN > VIH, TA = +25C.
60 57 IDD (A) 54 51 48 45 110 125 20 35 50 65 80 95 5 -40 -25 -10 Junction Temperature (C)
V R = 5.0V COUT = 3.3 F
0.12 Dropout Voltage (V)
VIN = 6.0V
0.10 0.08 0.06 0.04 0.02 0.00
VR = 5.0V COUT = 3.3 F
IL = 150 mA
IL = 100 mA
IL = 50 mA
110
Junction Temperature (C)
FIGURE 2-13: Temperature.
5.01 5.00 Output Voltage (V) 4.99 4.98 4.97 4.96 4.95 4.94 4.93
VR = 5.0V COUT = 3.3 F VIN = 6.0V
Supply Current vs. Junction
FIGURE 2-16: Dropout Voltage vs. Junction Temperature.
VIN = 3.8V VOUT = 2.8V CIN = 1 F Ceramic COUT = 1 F Ceramic Frequency = 1 kHz
IL = 150 mA
100mV/DIV
VOUT
IL = 100 mA
IL = 0.1 mA
Load Current
110
Junction Temperature (C)
FIGURE 2-14: Output Voltage vs. Junction Temperature (150 mA).
0.40 Load Regulation (%) 0.30 0.20 0.10 0.00 -0.10 -0.20 -0.30 -0.40 110 Junction Temperature (C) 125 20 35 50 65 80 -40 -25 -10 95 5
VR = 5.0V COUT = 3.3 F VIN = 6.0 V IL = 100 mA IL = 50 mA IL = 150 mA
125
20
35
50
65
80
-40
-25
-10
95
150mA Load 100mA
5
FIGURE 2-17: (COUT = 1 F).
VIN = 3.0V VOUT = 2.8V CIN = 1 F Ceramic COUT = 10 F Ceramic Frequency = 10 kHz
Load Transient Response.
100mV / DIV
VOUT
Load Current 150mA Load 100mA
FIGURE 2-15: Load Regulation vs. Junction Temperature.
FIGURE 2-18: (COUT = 10 F).
Load Transient Response.
DS21662C-page 6
2003 Microchip Technology Inc.
125
20
35
50
65
80
-40
-25
-10
95
5
TC2014/2015/2185
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 A, COUT = 3.3 F, SHDN > VIH, TA = +25C.
FIGURE 2-19: (COUT = 1 F).
Line Transient Response.
FIGURE 2-22:
Wake-Up Response.
Power Supply Ripple Rejection (dB)
0 -10 -20 -30 -40 -50 -60 -70
VOUT 100mV/DIV
VIN = 4.0V VINAC = 100 mV VOUTDC = 3.0V
COUT = 1F Ceramic CBYPASS = 0.01 F Ceramic
150mA
IOUT = 150 mA IOUT = 100 mA
VIN = 3.105V VOUT = 3.006V CIN = 1 F Ceramic COUT = 10 F Ceramic RLOAD = 20
100mA
IOUT = 50 mA
10
100
10k 100k 1M 10000 100000 100000 0 Frequency (Hz)
1k 1000
FIGURE 2-20: Load Transient Response in Dropout. (C OUT = 10 F).
FIGURE 2-23: PSRR vs. Frequency (COUT = 1 F Ceramic).
Power Supply Ripple Rejection (dB) 0 -10 -20 -30 -40 -50 -60 -70 10 10 100 1k 1000 10k 100k 1M 10000 100000 100000 0
VIN = 4.0V VINAC = 100 mV VOUTDC = 3.0V COUT = 10 F Ceramic CBYPASS = 0.01 F Ceramic
IOUT = 150 mA IOUT = 100 mA
Frequency (Hz)
FIGURE 2-21:
Shutdown Delay Time.
FIGURE 2-24: PSRR vs. Frequency (COUT = 10 F Ceramic).
2003 Microchip Technology Inc.
DS21662C-page 7
TC2014/2015/2185
Note: Unless otherwise indicated, VIN = VR + 1V, IL = 100 A, COUT = 3.3 F, SHDN > VIH, TA = +25C.
Power Supply Ripple Rejection (dB) 0 -10 -20 -30 -40 -50 -60 -70 10 10 100 100 1k 1000 10k 100k 1M 10000 100000 100000 0
CBYPASS = 0.01 F
VIN = 4.0V VINAC = 100 mV VOUTDC = 3.0V CBYPASS = 0 F
COUT = 10 F Tantalum I OUT = 150 mA
10 10.000
Noise (mV/ Hz)
1 1.000
VIN = 4.0V VOUTDC = 3.0V IOUT = 100 A CBYPASS = 470 pF
0.1 0.100 0.10 0.010
COUT = 1 F
COUT = 10 F
0.001 10 100 100 10k 100k 1M 10000 100000 100000 0 Frequency (Hz) 1k 1000
Frequency (Hz)
FIGURE 2-25: PSRR vs. Frequency (COUT = 10 F Tantalum).
FIGURE 2-26:
Output Noise vs. Frequency.
DS21662C-page 8
2003 Microchip Technology Inc.
TC2014/2015/2185
3.0 PIN DESCRIPTIONS
3.3 Shutdown Control Input (SHDN)
The descriptions of the pins are described in Table 3-1. The regulator is fully enabled when a logic high is applied to SHDN. The regulator enters shutdown when a logic low is applied to this input. During shutdown, output voltage falls to zero and supply current is reduced to 0.5 A (max).
TABLE 3-1:
Pin No. 1 2 3 4 5
PIN FUNCTION TABLE
Symbol VIN GND SHDN Bypass VOUT Description Unregulated supply input Ground terminal Shutdown control input Reference bypass input Regulated voltage output
3.4
Reference Bypass Input (Bypass)
3.1
Unregulated Supply Input (VIN)
Connect unregulated input supply to the VIN pin. If there is a large distance between the input supply and the LDO regulator some input capacitance is necessary for proper operation. A 1 F capacitor connected from VIN to ground is recommended for most applications.
Connecting a low value ceramic capacitor to this pin will further reduce output voltage noise and improve the Power Supply Ripple Rejection (PSRR) performance of the LDO. Typical values from 470 pF to 0.01 F are suggested. Smaller and larger values can be used but do affect the speed at which the LDO output voltage rises when input power is applied. The larger the bypass capacitor, the slower the output voltage will rise.
3.5
Regulated Voltage Output (VOUT)
3.2
Ground Terminal (GND)
Connect the output load to VOUT of the LDO. Also connect one side of the LDO output de coupling capacitor as close as possible to the VOUT pin.
Connect the unregulated input supply ground return to GND. Also connect one side of the 1 F typical input decoupling capacitor close to this pin and one side of the output capacitor COUT to this pin.
2003 Microchip Technology Inc.
DS21662C-page 9
TC2014/2015/2185
4.0 DETAILED DESCRIPTION
4.1 Bypass Input
The TC2014, TC2015 and TC2185 are precision fixed output voltage regulators (If an adjustable version is needed, see the TC1070, TC1071 or TC1187 (DS21353) datasheet.) Unlike bipolar regulators, the TC2014, TC2015 and TC2185 supply current does not increase with load current. In addition, the LDO output voltage is stable using 1 F of ceramic or tantalum capacitance over the entire specified input voltage range and output current range. Figure 4-1 shows a typical application circuit. The regulator is enabled any time the shutdown input (SHDN) is at or above VIH, and disabled (shutdown) when SHDN is at or below VIL. SHDN may be controlled by a CMOS logic gate or I/O port of a microcontroller. If the SHDN input is not required, it should be connected directly to the input supply. While in shutdown, supply current decreases to 0.05 A (typical) and VOUT falls to zero volts. A 0.01 F ceramic capacitor connected from the Bypass input to ground reduces noise present on the internal reference, which in turn significantly reduces output noise. If output noise is not a concern, this input may be left unconnected. Larger capacitor values may be used, but the result is a longer time period to rated output voltage when power is initially applied.
4.2
Output Capacitor
A 1 F (min) capacitor from VOUT to ground is required. The output capacitor should have an esr (effective series resistance) of 0.01 to 5 for VOUT 2.5V, and 0.05. to 5 for VOUT < 2.5V. Ceramic, tantalum or aluminum electrolytic capacitors can be used. When using ceramic capacitors, X5R and X7R dielectric material are recommended due to their stable tolerance over temperature. However, other dielectrics can be used as long as the minimum output capacitance is maintained.
4.3
1 + + 1 F Battery VIN VOUT 5 + 1 F VOUT
Input Capacitor
2
GND
TC2014 TC2015 TC2185
3
SHDN
Bypass
4 0.01 F Reference Bypass Cap (Optional)
A 1 F capacitor should be connected from VIN to GND if there is more than 10 inches of wire between the regulator and this AC filter capacitor, or if a battery is used as the power source. Aluminum, electrolytic or tantalum capacitors can be used (Since many aluminum electrolytic capacitors freeze at approximately -30C, solid tantalum are recommended for applications operating below -25C). When operating from sources other than batteries, supply-noise rejection and transient response can be improved by increasing the value of the input and output capacitors and employing passive filtering techniques.
Shutdown Control (from Power Control Logic)
FIGURE 4-1:
Typical Application Circuit.
DS21662C-page 10
2003 Microchip Technology Inc.
TC2014/2015/2185
5.0
5.1
THERMAL CONSIDERATIONS
Power Dissipation
The PD equation can be used in conjunction with the PDMAX equation to ensure regulator thermal operation is within limits. For example: Given: VINMAX VOUTMIN TJMAX TAMAX = 3.0V +10% = 2.7V - 2.5% = +125C = +55C
The amount of power the regulator dissipates is primarily a function of input voltage, output voltage and output current. The following equation is used to calculate worst-case power dissipation:
ILOADMAX = 40 mA
EQUATION
P Where: PD VINMAX VOUTMIN ILMAX = Worst-case actual power dissipation = Maximum voltage on VIN = Minimum regulator output voltage = Maximum output (load) current D ( V INMAX - V OU TMIN )I LMAX
Find: 1. Actual power dissipation 2. Maximum allowable dissipation Actual power dissipation: P D = ( V INMAX - V OU TMIN )I LMAX [ ( 3.0 x 1.1 ) - ( 2.7 x 0.975 ) ]40 x 10 = -------------------------------------------------------------------------------------------220 = 26.7mW Maximum allowable power dissipation: T JMAX - T AMAX P DMAX = ------------------------------------- JA 125 - 55 = -------------------220 = 318mW In this example, the TC2014 dissipates a maximum of only 26.7 mW; far below the allowable limit of 318 mW. In a similar manner, the P D equation and PDMAX equation can be used to calculate maximum current and/or input voltage limits.
-3
The maximum allowable power dissipation (PDMAX) is a function of the maximum ambient temperature (TAMAX), the maximum allowable die temperature (TJMAX) (+125C) and the thermal resistance from junction-to-air (JA). The 5-Pin SOT-23A package has a JA of approximately 220C/Watt when mounted on a typical two layer FR4 dielectric copper clad PC board.
EQUATION
T JMAX - T AMAX P DMAX = ------------------------------------- JA Where all terms are previously defined.
5.2
Layout Considerations
The primary path of heat conduction out of the package is via the package leads. Therefore, layouts having a ground plane, wide traces at the pads and wide power supply bus lines combine to lower JA and, therefore, increase the maximum allowable power dissipation limit.
2003 Microchip Technology Inc.
DS21662C-page 11
TC2014/2015/2185
6.0
6.1
PACKAGING INFORMATION
Package Marking Information
&
represents part number code + temperature range and voltage (V) TC2014 PA PB PC PD PE PF PG TC2015 RA RB RC RD RE RF RG TC2185 UA UB UC UD UE UF UG
1.8 2.5 2.7 2.8 2.85 3.0 3.3
represents year and 2-month period code represents lot ID number
DS21662C-page 12
2003 Microchip Technology Inc.
TC2014/2015/2185
5-Lead Plastic Small Outline Transistor (OT) (SOT23)
E E1
p B p1 D
n
1
c A A2
L
A1
Units Dimension Limits n Number of Pins p Pitch p1 Outside lead pitch (basic) Overall Height Molded Package Thickness Standoff Overall Width Molded Package Width Overall Length Foot Length Foot Angle Lead Thickness Lead Width Mold Draft Angle Top Mold Draft Angle Bottom * Controlling Parameter Significant Characteristic A A2 A1 E E1 D L c B
MIN
INCHES* NOM 5 .038 .075 .046 .043 .003 .110 .064 .116 .018 5 .006 .017 5 5
MAX
MIN
.035 .035 .000 .102 .059 .110 .014 0 .004 .014 0 0
.057 .051 .006 .118 .069 .122 .022 10 .008 .020 10 10
MILLIMETERS NOM 5 0.95 1.90 0.90 1.18 0.90 1.10 0.00 0.08 2.60 2.80 1.50 1.63 2.80 2.95 0.35 0.45 0 5 0.09 0.15 0.35 0.43 0 5 0 5
MAX
1.45 1.30 0.15 3.00 1.75 3.10 0.55 10 0.20 0.50 10 10
Notes: Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" (0.254mm) per side. JEDEC Equivalent: MO-178 Drawing No. C04-091
2003 Microchip Technology Inc.
DS21662C-page 13
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NOTES:
DS21662C-page 14
2003 Microchip Technology Inc.
TC2014/2015/2185
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. Device -XX Output Voltage X Temperature Range XXXX Package Examples:
a) b) c) TC2014-1.8VCTTR:5LD SOT-23-A, 1.8V, Tape and Reel. TC2014-2.85VCTTR: 5LD SOT-23-A, 2.85V, Tape and Reel. TC2014-3.3VCTTR: 5LD SOT-23-A, 3.3V, Tape and Reel. TC2015-1.8VCTTR: 5LD SOT-23-A, 1.8V, Tape and Reel. TC2015-2.85VCTTR: 5LD SOT-23-A, 2.85V, Tape and Reel. TC2015-3.0VCTTR: 5LD SOT-23-A, 3.0V, Tape and Reel. TC2185-1.8VCTTR: 5LD SOT-23-A, 1.8V, Tape and Reel. TC2185-2.8VCTTR: 5LD SOT-23-A, 2.8V, Tape and Reel.
Device:
TC2014: TC2015: TC2185: XX XX XX XX XX V = = = = = =
50 mA LDO with Shutdown and VREF Bypass 100 mA LDO with Shutdown and VREF Bypass 150 mA LDO with Shutdown and VREF Bypass
a) b) c) a) b)
Output Voltage:
1.8V 2.7V 2.8V 3.0V 3.3V -40C to +125C
Temperature Range: Package:
CTTR = Plastic Small Outline Transistor (SOT-23), 5-lead, Tape and Reel
Sales and Support
Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
2003 Microchip Technology Inc.
DS21662C-page15
TC2014/2015/2185
NOTES:
DS21662C-page 16
2003 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices: * * * Microchip products meet the specification contained in their particular Microchip Data Sheet. Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. Microchip is willing to work with the customer who is concerned about the integrity of their code. Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as "unbreakable."
* *
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break microchip's code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip's products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights.
Trademarks The Microchip name and logo, the Microchip logo, KEELOQ, MPLAB, PIC, PICmicro, PICSTART, PRO MATE and PowerSmart are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, microID, MXDEV, MXLAB, PICMASTER, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Accuron, dsPIC, dsPICDEM.net, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP, ICEPIC, microPort, Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM, PICC, PICkit, PICDEM, PICDEM.net, PowerCal, PowerInfo, PowerTool, rfPIC, Select Mode, SmartSensor, SmartShunt, SmartTel and Total Endurance are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. Serialized Quick Turn Programming (SQTP) is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. (c) 2003, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona in July 1999 and Mountain View, California in March 2002. The Company's quality system processes and procedures are QS-9000 compliant for its PICmicro (R) 8-bit MCUs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, non-volatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001 certified.
2003 Microchip Technology Inc.
DS21662C - page 17
M
WORLDWIDE SALES AND SERVICE
AMERICAS
Corporate Office
2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7200 Fax: 480-792-7277 Technical Support: 480-792-7627 Web Address: http://www.microchip.com
ASIA/PACIFIC
Australia
Microchip Technology Australia Pty Ltd Suite 22, 41 Rawson Street Epping 2121, NSW Australia Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
Japan
Microchip Technology Japan K.K. Benex S-1 6F 3-18-20, Shinyokohama Kohoku-Ku, Yokohama-shi Kanagawa, 222-0033, Japan Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Rocky Mountain
2355 West Chandler Blvd. Chandler, AZ 85224-6199 Tel: 480-792-7966 Fax: 480-792-4338
China - Beijing
Microchip Technology Consulting (Shanghai) Co., Ltd., Beijing Liaison Office Unit 915 Bei Hai Wan Tai Bldg. No. 6 Chaoyangmen Beidajie Beijing, 100027, No. China Tel: 86-10-85282100 Fax: 86-10-85282104
Korea
Microchip Technology Korea 168-1, Youngbo Bldg. 3 Floor Samsung-Dong, Kangnam-Ku Seoul, Korea 135-882 Tel: 82-2-554-7200 Fax: 82-2-558-5934
Atlanta
3780 Mansell Road, Suite 130 Alpharetta, GA 30022 Tel: 770-640-0034 Fax: 770-640-0307
Singapore
Microchip Technology Singapore Pte Ltd. 200 Middle Road #07-02 Prime Centre Singapore, 188980 Tel: 65-6334-8870 Fax: 65-6334-8850
Boston
2 Lan Drive, Suite 120 Westford, MA 01886 Tel: 978-692-3848 Fax: 978-692-3821
China - Chengdu
Microchip Technology Consulting (Shanghai) Co., Ltd., Chengdu Liaison Office Rm. 2401-2402, 24th Floor, Ming Xing Financial Tower No. 88 TIDU Street Chengdu 610016, China Tel: 86-28-86766200 Fax: 86-28-86766599
Taiwan
Microchip Technology (Barbados) Inc., Taiwan Branch 11F-3, No. 207 Tung Hua North Road Taipei, 105, Taiwan Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
Chicago
333 Pierce Road, Suite 180 Itasca, IL 60143 Tel: 630-285-0071 Fax: 630-285-0075
China - Fuzhou
Microchip Technology Consulting (Shanghai) Co., Ltd., Fuzhou Liaison Office Unit 28F, World Trade Plaza No. 71 Wusi Road Fuzhou 350001, China Tel: 86-591-7503506 Fax: 86-591-7503521
Dallas
4570 Westgrove Drive, Suite 160 Addison, TX 75001 Tel: 972-818-7423 Fax: 972-818-2924
EUROPE
Austria
Microchip Technology Austria GmbH Durisolstrasse 2 A-4600 Wels Austria Tel: 43-7242-2244-399 Fax: 43-7242-2244-393
Detroit
Tri-Atria Office Building 32255 Northwestern Highway, Suite 190 Farmington Hills, MI 48334 Tel: 248-538-2250 Fax: 248-538-2260
China - Hong Kong SAR
Microchip Technology Hongkong Ltd. Unit 901-6, Tower 2, Metroplaza 223 Hing Fong Road Kwai Fong, N.T., Hong Kong Tel: 852-2401-1200 Fax: 852-2401-3431
Kokomo
2767 S. Albright Road Kokomo, Indiana 46902 Tel: 765-864-8360 Fax: 765-864-8387
Denmark
Microchip Technology Nordic ApS Regus Business Centre Lautrup hoj 1-3 Ballerup DK-2750 Denmark Tel: 45 4420 9895 Fax: 45 4420 9910
China - Shanghai
Microchip Technology Consulting (Shanghai) Co., Ltd. Room 701, Bldg. B Far East International Plaza No. 317 Xian Xia Road Shanghai, 200051 Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
Los Angeles
18201 Von Karman, Suite 1090 Irvine, CA 92612 Tel: 949-263-1888 Fax: 949-263-1338
France
Microchip Technology SARL Parc d'Activite du Moulin de Massy 43 Rue du Saule Trapu Batiment A - ler Etage 91300 Massy, France Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
San Jose
Microchip Technology Inc. 2107 North First Street, Suite 590 San Jose, CA 95131 Tel: 408-436-7950 Fax: 408-436-7955
China - Shenzhen
Microchip Technology Consulting (Shanghai) Co., Ltd., Shenzhen Liaison Office Rm. 1812, 18/F, Building A, United Plaza No. 5022 Binhe Road, Futian District Shenzhen 518033, China Tel: 86-755-82901380 Fax: 86-755-82966626
Toronto
6285 Northam Drive, Suite 108 Mississauga, Ontario L4V 1X5, Canada Tel: 905-673-0699 Fax: 905-673-6509
Germany
Microchip Technology GmbH Steinheilstrasse 10 D-85737 Ismaning, Germany Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
China - Qingdao
Rm. B503, Fullhope Plaza, No. 12 Hong Kong Central Rd. Qingdao 266071, China Tel: 86-532-5027355 Fax: 86-532-5027205
Italy
Microchip Technology SRL Centro Direzionale Colleoni Palazzo Taurus 1 V. Le Colleoni 1 20041 Agrate Brianza Milan, Italy Tel: 39-039-65791-1 Fax: 39-039-6899883
India
Microchip Technology Inc. India Liaison Office Divyasree Chambers 1 Floor, Wing A (A3/A4) No. 11, O'Shaugnessey Road Bangalore, 560 025, India Tel: 91-80-2290061 Fax: 91-80-2290062
United Kingdom
Microchip Ltd. 505 Eskdale Road Winnersh Triangle Wokingham Berkshire, England RG41 5TU Tel: 44 118 921 5869 Fax: 44-118 921-5820
12/05/02
DS21662C-page 18
2003 Microchip Technology Inc.

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